The Role of the Spin Exchange Interaction in the Spin Transport Through Serially Coupled Double Quantum Dots in the Strong Coupling Regime
Author: Salah A. H. Al Murshidee and Jenan M. AL-Mukh
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Abstract
In this work we introduce extended theoretical study for the spin transport through two serially coupled double quantum dots embedded between two normal leads. The" two coupled quantum dots Anderson model " is used in our treatment to model the double coupled quantum dots energy levels that hybridize with left and right leads to enable the spin tunneling process. Our study incorporates the intra-dot Coulomb correlation on each quantum dot site, the inter-dot and spin exchange interaction between the dots and their coupling with the leads. The occupation number on the quantum dots energy levels is formulated, then it is used to calculate the spin accumulation on each quantum dot. Notably, the formulas of the occupation numbers and the corresponding hybridized energy levels are solved self-consistently. These results help us to calculate the hybridized spin dependence energy levels and then to determine the spin dependent of the energy gap between the " HOMO and LUMO energy levels".. The spin current tunneling through the system is also derived and employed to investigate the transport properties of the system.
Keywords: Nanotechnology, Nanoelectronics, Spintronic devices, Quantum Dots